发明名称 Large die photolithography.
摘要 <p>A reticle (20) and method of using it to expose layers of wafers for large integrated circuits (10). The integrated circuit (10) is designed so that nonrepeating patterns are laid out in perimeter areas, distinct from the center area containing contiguous repeating patterns. The reticle (20) is patterned with multiple masks (21-23), with different masks representing the repeating and nonrepeating patterns. The mask (22) representing the repeating pattern may then be stepped and illuminated separately from any mask (21,23) representing a nonrepeating pattern. &lt;IMAGE&gt;</p>
申请公布号 EP0602634(A1) 申请公布日期 1994.06.22
申请号 EP19930120290 申请日期 1993.12.16
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 TEW, CLAUDE E.;PORADISH, FRANK J.
分类号 G03F1/08;G03F7/20;(IPC1-7):G03F7/20 主分类号 G03F1/08
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