发明名称 ROW DECODER CIRCUIT OF NON-VOLATILE MEMORY DEVICE
摘要 The row decoder circuit includes a first circuit for selecting one of a plurality of word lines by an address signal, a second circuit for connecting the first circuit to the word line, a fourth circuit for connecting a sense line to a third circuit controlled by an external control signal, a fifth circuit for supplying a high voltage, and sixth and seventh circuits for connecting the fifth circuit to the word line and to the sense line, thereby reducing an area occupied by a chip.
申请公布号 KR940005695(B1) 申请公布日期 1994.06.22
申请号 KR19900021060 申请日期 1990.12.19
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, UNG - MU
分类号 G11C17/00;G11C16/04;G11C16/06;G11C16/08;(IPC1-7):G11C16/06 主分类号 G11C17/00
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