| 摘要 |
A semiconductor device using an insulation coated metal substrate includes semiconductor elements supported on an insulation coated metal substrate which is made of a metal substrate and an insulation layer disposed on the metal substrate, a wiring of a metallic foil formed on the insulation layer and connected to the semiconductor elements, an insulative sealing material covering the semiconductor elements and the wiring, and a solid insulation with a larger specific inductive capacity than that of the sealing material which is interposed between an edge part of the wiring and the sealing material. |
