发明名称 Method for manufacturing a recording head with integrally housed semiconductor functional elements
摘要 A method for manufacturing a recording head with integrally housed functional elements includes the steps of: (a) providing a plurality of base members each having a single-crystal semiconductor layer thereon, (b) bonding the single-crystal semiconductor layers of the plurality of base members to the surface of a common substrate in a face-to-face state, (c) removing the plurality of base members such that the single-crystal semiconductor layers remain on the common substrate, and (d) forming semiconductor functional elements on the common substrate while forming an electrothermal transducer serving to generate thermal energy on the common substrate using the single-crystal semiconductor layers.
申请公布号 US5322811(A) 申请公布日期 1994.06.21
申请号 US19920922398 申请日期 1992.07.31
申请人 CANON KABUSHIKI KAISHA 发明人 KOMURO, HIROKAZU;TSUTSUMI, TAKAYOSHI
分类号 B41J2/16;(IPC1-7):H01L21/70 主分类号 B41J2/16
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