| 摘要 |
A method is described of providing a substrate (2) with a surface layer from a gas phase with a vapor in a reactor chamber (1), which vapor is generated through evaporation of a substance (5) in a reservoir (4) and is conducted to the reactor chamber (1) through a gas line (8) (Chemical Vapor Deposition (CVD)). According to the invention, the vapor is conducted from the reservoir (4) to the reactor chamber (1) in that it is pumped from the reservoir (4) to the reactor chamber (1) by a pump (9) included in the gas line. The use of the pump renders the method very flexible. Thus the vapor flow can be easily adapted through adaptation of a pumping rate associated with the pump. In addition, the vapor flow is not dependent on a process pressure which prevails in the reactor (1).
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