METHOD OF MAKING MEMORY APPARATUS IN THE SEMICONDUCTOR

摘要

The method comprises the steps of sequentially forming a gate oxide layer, gate electron layer, gate insulating layer and etch stop on a silicon substrate, forming interlevel insulating layer on the substrate, forming a predetermined photoresist 1 on the substrate, forming a contact hole through photolithography, carrying out etching using a resist pattern to expose an active region, thereby improving reliability and yield.