发明名称 |
PHOTO-RESIST COMPOSITION USE DEEP ULTRAVIOLET RAYS |
摘要 |
Photoresist composition for lithography using deep ultraviolet in which polyvinyl copolymer is used as photo cross-linking polymeric resin and melamin derivative as cross-linking agent is provided. The composition is thermally stable to plasma so that the processing condition of the semiconductor can be satisfied.
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申请公布号 |
KR940005612(B1) |
申请公布日期 |
1994.06.21 |
申请号 |
KR19910009771 |
申请日期 |
1991.06.13 |
申请人 |
CHEIL SYNTHETICS INC. |
发明人 |
KIM, KWANG - TAE;KIM, JONG - RAK;KIM, JIN - YOL |
分类号 |
G03F7/004;(IPC1-7):G03F7/004 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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