发明名称 PHOTO-RESIST COMPOSITION USE DEEP ULTRAVIOLET RAYS
摘要 Photoresist composition for lithography using deep ultraviolet in which polyvinyl copolymer is used as photo cross-linking polymeric resin and melamin derivative as cross-linking agent is provided. The composition is thermally stable to plasma so that the processing condition of the semiconductor can be satisfied.
申请公布号 KR940005612(B1) 申请公布日期 1994.06.21
申请号 KR19910009771 申请日期 1991.06.13
申请人 CHEIL SYNTHETICS INC. 发明人 KIM, KWANG - TAE;KIM, JONG - RAK;KIM, JIN - YOL
分类号 G03F7/004;(IPC1-7):G03F7/004 主分类号 G03F7/004
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