ELECTRIC BONDING OF SI-CONTAINING SILICON CARBIDE CERAMIC

摘要

PURPOSE:To carry out an excellent reaction sintering bonding free from generation of a crack or a pore by heating up to a temperature lower than the temperature where Si in an Si-containing silicon carbide ceramic is fused by the first heater and then heating only the butted part and its neighborhood to a temperature higher than the fusing temperature of Si by the second heater. CONSTITUTION:After making the inside atmosphere of a muffle sufficiently nonoxidative by flowing Ar gas, an electric voltage is applied between current- carrying electrode 2a and 2b from an electric power source unit 4 so as to electrically heat directly a ceramic between the electrodes. The butted part is heated up to about 1100 deg.C and the direct induction heating of the butted part is subsequently started by charging the a induction coil 5 with electricity from an electric power source unit 6 for induction heating while keeping the electric power for direct electric heating constant. The butted part is heated up to about 1500 deg.C and the temperature of the area within a range of about 35mm from the butted part is then controlled to >=the fusing temperature of Si. The temperature is lowered to about 1100 deg.C by the electric power source unit 6 for induction heating and subsequently lowered to the room temperature by the electric power source unit 4 for electric heating.