| 摘要 |
The method comprises the steps of forming a Cr layer 2 on a quartz substrate 1, patterning the Cr layer 2 using a resist layer 3, forming a shift layer 4 on the patterned Cr layer 2 and patterning the shift layer 4, forming a phase shift layer 5 on the surface of the patterned layer, and etching the phase shift layer to form sidewall, thereby removing bridges produced at edge of the pattern, and improving the pattern profile. |
