| 发明名称 |
METHOD OF MAKING PATTERN MASK PHOTO-RESIST |
| 摘要 |
The method wherein photoresist is coated on a substrate, and then exposure and developing process is performed, and the exposure process includes a first overall exposure and a second main exposure, thereby improving the pattern profile and obtaining uniform exposure.
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| 申请公布号 |
KR940005624(B1) |
申请公布日期 |
1994.06.21 |
| 申请号 |
KR19910021479 |
申请日期 |
1991.11.28 |
| 申请人 |
HYUNDAI ELECTRONICS CO., LTD. |
发明人 |
CHOE, YONG - KUN;IN, JAE - SHIK;HWANG, JUN |
| 分类号 |
G03F7/20;(IPC1-7):G03F7/20 |
主分类号 |
G03F7/20 |
| 代理机构 |
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代理人 |
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| 地址 |
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