| 摘要 |
The method comprises the steps of forming a Cr layer 2 on a quartz substrate 1, patterning the Cr layer 2 using a resist layer 3, forming a phase shift layer 4 on the patterned Cr layer 2, forming a resist layer on the phase shift layer 4 and patterning the resist, and wet etching the phase shift layer 4 to make the sidewall of the phase shift layer 1 sloped, thereby reducing damage and contamination of the substrate. |
