COMPOSITION OF PHOTO-RESIST

摘要

This is a new photoresist composition for submicron lithography using i-line. The photoresist composition comprises: non-benzophenone type photo active compound of formula (I) and (II), m-/p-cresol novolak as a binder resin, conventional solvent and additive. In formula, n is an integer with 1-10, X is methyl or hydrogen and D is hydrogen or naphtoquinone diazide of formula (III).