发明名称 |
Dual layer epitaxtial base heterojunction bipolar transistor |
摘要 |
A Si-SiGe-Si heterojunction bipolar transistor which has a very thin epitaxial base layer. The device possesses an optimum doping profile across a base layer. The emitter region is higher doping concentration of n+-type. The base layer of p-type comprises both a monocrystalline SiGe layer having a lightly doped region on a collector side and a heavily doped region, and a lightly doped monocrystalline Si layer on an emitter side. An emitter side Si-SiGe heterojunction exists in the base layer and a collector side Si-SiGe heterojunction exists in the collector region. Those provides a slope negative gradient of a potential profile from the emitter to collector without a potential barrier for carriers, or electrons or holes. The very thin base layer is connected to an aluminium contact through an external base layer and a base contact layer thereby permitting the very thin base layer to be free from a damage by contacting with a metal such as aluminium. In replacement of this, the base layer may be formed thereunder with a base contact layer to cover the damage of the base layer.
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申请公布号 |
US5323032(A) |
申请公布日期 |
1994.06.21 |
申请号 |
US19920941723 |
申请日期 |
1992.09.08 |
申请人 |
NEC CORPORATION |
发明人 |
SATO, FUMIHIKO;TASHIRO, TSUTOMU |
分类号 |
H01L29/165;H01L21/331;H01L29/73;H01L29/732;H01L29/737;(IPC1-7):H01L29/161;H01L29/205;H01L29/225 |
主分类号 |
H01L29/165 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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