发明名称 Phase shift mask and method of making the same
摘要 A phase shift mask comprising a light-transmitting substrate, a plurality of uniformly spaced phase shift regions formed over the light-transmitting substrate, and a plurality of light shield regions formed over the light-transmitting substrate, each of the light shield regions being disposed at opposite sides of the phase shift regions. Each light shield region has substantially the same thickness as the phase shift regions. The phase shift regions are made of a conductive metal, thereby requiring no additional conductive film for avoiding charging phenomena. The light shield regions are made of an inexpensive metal such as zinc, which typically is less expensive than materials such as chromium. Any environmental contamination caused by waste disposal or the like also may be avoided in that heavy metals such as chromium need not be used.
申请公布号 US5322749(A) 申请公布日期 1994.06.21
申请号 US19920976020 申请日期 1992.11.13
申请人 GOLDSTAR ELECTRON CO., LTD. 发明人 HAN, O. SEOK
分类号 G03F1/08;G03F1/00;G03F1/30;G03F1/40;G03F1/68;G03F1/80;H01L21/027;(IPC1-7):G03F9/00 主分类号 G03F1/08
代理机构 代理人
主权项
地址