| 摘要 |
A method for forming a pattern which improves a profile of a resist pattern. The method comprises the steps of forming a photoresist layer on a substrate (1) having a step, firstly exposing the photoresist layer using a first mask, secondly exposing a portion of the photoresist layer which is relatively thick due to the step using a second mask, and developing the exposed photoresist layer. Consequently, sufficient exposure is performed in a thick resist at the step portion, thereby to avoid the formation of a bridge or scum and obtaining a pattern having an improved profile. <IMAGE> |
