发明名称 Amplifier devices.
摘要 <p>A method of operating an amplifier comprising a plurality polysilicon thin film transistors (27,29,31,33,39,49,53) including a current source transistor (39) and a load transistor (27,31), the method comprising operating the current source transistor (39) and the load transistor (27,31) at a gate to source voltage less than a threshold voltage (as defined) to reduce the drain conductance of said source and load transistors ad thereby to improve amplifier performance parameters which depend on said drain conductance. &lt;IMAGE&gt;</p>
申请公布号 EP0601713(A1) 申请公布日期 1994.06.15
申请号 EP19930308970 申请日期 1993.11.10
申请人 GEC-MARCONI LIMITED 发明人 FLUXMAN, STEVEN MICHAEL;REITA, CARLO
分类号 H03F1/32;H03F1/02;H03F3/345;H03F3/347;H03F3/45;(IPC1-7):H03F3/45 主分类号 H03F1/32
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