发明名称 |
Charge-coupled device having high charge-transfer efficiency over a broad temperature range. |
摘要 |
A charge-coupled device having a high charge-transfer efficiency over a broad temperature range. The device comprises a substrate of semiconductor material of one conductivity type; a first buried channel formed in the substrate and of a conductivity type opposite to that of the substrate; a second buried channel of a conductivity type opposite to that of the substrate formed in the same region of the substrate as the first buried channel and having a greater depth of penetration into the substrate than the first buried channel; compensated regions formed at intervals in the buried channels providing a means for containing individual packets of charge and shaped for inducing a narrow channel effect and for producing a fringing electric field in a direction of charge transfer in uncompensated buried channel regions; electrode gates associated with each pair of adjoining compensated and uncompensated regions in the device; and means for clocking the electrodes for causing a string of charge packets to be transferred through the device. <IMAGE> |
申请公布号 |
EP0601568(A1) |
申请公布日期 |
1994.06.15 |
申请号 |
EP19930119809 |
申请日期 |
1993.12.08 |
申请人 |
EASTMAN KODAK COMPANY |
发明人 |
BANGHART, EDMUND KENNETH;NELSON, EDWARD TICHENOR;DES JARDIN, WILLIAM FREDERICK;LAVINE, JAMES PHILIP;BURKEY, BRUCE CURTISS |
分类号 |
H01L29/762;H01L21/339;H01L27/148;H01L29/10 |
主分类号 |
H01L29/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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