| 摘要 |
<p>A process and apparatus is disclosed for providing access to the interior of a vacuum deposition chamber in a vacuum deposition apparatus (10) without exposing residues, such as chlorosilane residues, within the chamber to moisture and/or oxygen-containing gases. The process comprises first placing over the upper surface of the vacuum deposition apparatus (10) an enclosure (40) which has a bottom opening large enough to completely cover the top opening to the chamber, and which is capable of being filled with one or more non-reactive gases. One or more non-reactive gases are then flowed into the enclosure (40) to purge moisture and/or oxygen-containing gases from the enclosure. After the enclosure (40) has been mounted on the apparatus (10) and purged by the flow of non-reactive gases therein, the vacuum deposition chamber may be opened, while continuing the flow of non-reactive gases into the enclosure (40). After servicing, the vacuum deposition chamber may be resealed, the flow of non-reactive gases shut off, and the enclosure (40) then removed from the apparatus (10). In a preferred embodiment, the flow of non-reactive gases into the enclosure (40) is positioned to flow down from the top of the enclosure (40) at a right angle to openings (44) in the sidewall (43) of the enclosure (40) provided for accessing the vacuum deposition chamber, to thereby provide a gas curtain of non-reactive gas flow across the openings (44) to inhibit ingress of moisture and/or oxygen-containing gases, as well as particulate impurities, into the enclosure (40). <IMAGE></p> |
