| 摘要 |
The method of fabricating semiconductor device includes the steps of forming a first insulating layer on a semiconductor substrate, defining an active and insulation region, selectively removing the insulation region portion of first insulating layer and substrate to form a trench, forming a second insulating layer sidewall on the side wall of the trench, burying the trench with polysilicon, forming a third insulating layer sidewall on the side wall of the trench, forming a field oxide layer, and forming a gate insulating layer and gate electrode on the exposed substrate, preventing reduction of active region due to bird's beak.
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