| 摘要 |
The method comprises the steps of forming a lightly-doped epitaxial layer on a heavily doped silicon substrate, forming a metal pattern on the epitaxial layer, forming a photoresist pattern on the back side of the silicon substrate, etching the back side of the silicon substrate to expose the epitaxial layer, and removing the photoresit, thereby accurate controlling the etch end point and improving the etch selectivity.
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