| 摘要 |
<p>PURPOSE:To lower the resistance value of a Ta (tantalum) gate wiring on an insulating substrate without increasing defective insulation by forming an anodized Ta film only to the circumferential edge part of the Ta gate wiring. CONSTITUTION:The anodized Ta film 4 is formed only to the circumferential edge part 3 of the Ta gate wiring 2. The reduction in the film thickness of the Ta gate wiring 2 except the wiring circumferential edge part 3 is obviated and the increase in the resistance value of the Ta gate wiring 2 is substantially obviated by forming the anodized Ta film 4 only to the wiring circumferential edge part 3 in such a manner. Namely, the anodized Ta film 4 is formed only to the overlap part of the Ta gate wiring 2 and an upper electrode 5, by which the resistance value of the Ta gate wiring 2 is lowered without increasing the defective insulation.</p> |
