| 摘要 |
PURPOSE:To detect the decrement of a high resistance constituting a high resistance load type memory cell and a junction leakage defect without injuring a function as a memory integrated circuit. CONSTITUTION:High resistors HR1 and HR2 constituting the high resistance load type memory cell 10 are made switchable to a state connected to power source, a state connected to ground and a state connected to any of no power source and no ground. Then, bit lines B, B<-> are made separatable from precharging lines 3, 4, and the value of currents flow through the bit lines B, B<-> are made measurable individually by current detection type amplifiers 13, 14. |
