| 摘要 |
Disclosed herein is a sputtering target with which a high resistivity thin film consisting of chromium, silicon and oxygen can be produced economically and stably for a long time. Also disclosed is a process for producing the sputtering target by selecting the grain size of a chromium (Cr) powder and a silicon dioxide (SiO2) powder, drying the powders sufficiently by heating, then mixing the dried powders to obtain a mixed powder containing generally from 20 to 80% by weight of chromium, most preferably from 50 to 80% by weight of chromium, the remainder being silicon dioxide, packing the mixed powder in a die, and sintering the packed powder by hot pressing or the like, to produce a desired sputtering target which has a two phase mixed structure. The sputtering target can be used for manufacture of thin film resistors and electric circuits.
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