| 摘要 |
PURPOSE:To provide a method for producing a phase shift mask by which a shifter pattern can easily be formed on a glass substrate as a base with high selectivity. CONSTITUTION:Polycrystalline silicon is deposited on a mask pattern 11 formed on a glass substrate 1 to form a polycrystalline silicon film 12, this film 12 is selectively etched to form a desired polycrystalline silicon pattern 14 and then a shifter pattern 15 is formed by oxidizing the pattern 14. |
