| 摘要 |
PURPOSE:To provide a method of patterning a semiconductor device, which is capable of performing a patterning by a simpler process. CONSTITUTION:(a) A Cr material layer 2 is formed on a glass substrate 1 and a patterning for using this layer 2 as wiring layers is performed. (b) A mask plate 3 formed with opening windows 31 having a shape corresponding to the pattern of the wiring layer to be formed is put on the layer 2, parts of the surface of the layer 2 are exposed through the windows 31 and an electric field E is applied in a chamber in a fluoride gas plasma atmosphere. (c) If the plate 3 is removed, fluorine compound films 21 are formed on the exposed parts. Etchings of different etching rates are respectively performed on the layer 2 and the films 21. (d) The desired wiring layers are formed as Cr patterned layers 22. |
