Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution

摘要

A method for selectively removing oxidized organometallic residues, oxidized organosilicon residues, native oxides, and damaged oxides created in plasma-etching through emersion of plasma-etched silicon wafers in a solution of anhydrous ammonium fluoride and a polyhydric alcohol, which is substantially free of hydrogen fluoride and water.