| 摘要 |
PURPOSE:To provide a semiconductor memory device which facilitates the prevention of the reduction of an internal holding voltage caused by a reading current and the setting of a large current as a reading current. CONSTITUTION:A pair of P-N-P transistors Q3 and Q4 are used as the loads of a pair of information holding N-P-N transistors Q1 and Q2 in a P-N-P load cell. In addition to a pair of reading N-P-N transistors Q7 and Q8 in the load cell, a pair of exclusive writing transistors Q5 and Q6 are provided. The collectors of the reading N-P-N transistors Q7 and Q8 are fixed to a ground potential and the collectors of the reading N-P-N transistors Q7 and Q8 are used as nodes different from the voltage holding nodes (a) and (b). With this constitution, a reading current is not applied to the voltage holding nodes (a) and (b). |
