APPLICATION METHOD OF FERROELECTRIC MEMORY ELEMENT

摘要

PURPOSE:To prevent the reduction of a spontaneous polarization in a ferro- electric memory element while information is maintained. CONSTITUTION:The electrodes 3 and 3 of the respective memory cells 4 of a ferroelectric memory device 1 are connected to each other with a short- circuiting circuit 8 while it is neither in a writing period nor in a reading period but in an information holding period. The short-circuiting circuit 8 has an impedance lower than an insulation resistance value between the electrodes 3 and 3 of the respective memory cells 4 and the electrodes 3 and 3 are short-circuited by the short-circuiting circuit 8, so that a reverse polarization field which has a direction opposite to the direction of the spontaneous polarization in the memory cell 4 can be eliminated.