| 摘要 |
PURPOSE:To increase the current-passing area on a P-N junction surface by a method wherein the groove, formed in the direction in parallel with the array direction where a plurality of lightemitting parts are arranged, is formed in mesa shape, adjacently- located light-emitting part separating groove is formed in forward mesa shape from the light-emitting surface to the P-N junction, and the part deeper than the P-N junction is formed in inverted mesa shape. CONSTITUTION:A p-type GaAs layer 13 is formed by growing an n-type GaAs layer 12 on a (100) n-type GaAs substrate 11 and by diffusing Zn. The photoresit, to be used for formation of a groove in the direction vertical to the array direction to be used for isolation of each light-emitting part from the array direction, is patterned in such a manner that the column direction where light-emitting parts are arranged in line is brought in parallel with the crystal axis in <0-11> direction, and when an etching treatment is conducted for formation of a groove deeper than the P-N junction surface using the above-mentioned photoresit as a mask, the groove in the direction of <0-11> is brought into forward mesa shape. The groove in direction <0-11> between light-emitting parts is formed in forwards mesa shape from the light emitting surface of the P-N junction surface 14, the part deeper than that is formed into inverted mesa shape, and the P-N junction surface 14 can be made wider. |
