发明名称 REINFORCED THIN-FILM ELECTRODE INTERFACE
摘要 PURPOSE: To obtain a zero gap thin film electrode structure providing electrochemical performance equivalent or superior to the electrochemical performance which is manufactured by using thin film material of low cost and obtained from a cell using nafion thin film. CONSTITUTION: A radiation fusion cation exchange thin film having an anode surface and a cathode surface which are subjected to plasma etching, a cathode combined with the thin film cathode surface which is subjected to plasma etching, and an anode combined with the thin film anode surface which is subjected to plasma etching are formed. The radiation fusion structure cation exchange thin film is selected out of a radiation fused fluoro sulfonic acid thin film, a benzene sulfonic acid thin film, an acrylic acid thin film and a methacrylic acid thin film. The cathode and the anode are constituted of catalystic electrode particles selected out of platinum, palladium, platinum carbon black and platinum graphite.
申请公布号 JPH06169583(A) 申请公布日期 1994.06.14
申请号 JP19930110777 申请日期 1993.05.12
申请人 HUGHES AIRCRAFT CO 发明人 KAARU DABURIYU TAUNSENDO;AASAA BII NASUROU;ANDORIYUU KINDORAA
分类号 C23C16/50;C23F4/00;C25B9/00;C25B9/08;H01M8/10;H01M8/18;H02N3/00 主分类号 C23C16/50
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