摘要 |
PURPOSE: To obtain a zero gap thin film electrode structure providing electrochemical performance equivalent or superior to the electrochemical performance which is manufactured by using thin film material of low cost and obtained from a cell using nafion thin film. CONSTITUTION: A radiation fusion cation exchange thin film having an anode surface and a cathode surface which are subjected to plasma etching, a cathode combined with the thin film cathode surface which is subjected to plasma etching, and an anode combined with the thin film anode surface which is subjected to plasma etching are formed. The radiation fusion structure cation exchange thin film is selected out of a radiation fused fluoro sulfonic acid thin film, a benzene sulfonic acid thin film, an acrylic acid thin film and a methacrylic acid thin film. The cathode and the anode are constituted of catalystic electrode particles selected out of platinum, palladium, platinum carbon black and platinum graphite. |