发明名称 Control circuit of dynamic random access memory
摘要 A control circuit of a memory system including a dynamic random access memory may include a first integrated circuit formed on a common substrate. The first integrated circuit may include a circuit responsive to an external memory access request signal for generating a control signal for controlling an operation timing of the dynamic random access memory to supply the control signal to the dynamic random access memory and a circuit for generating an address signal for specifying an address of the dynamic random access memory to be accessed to supply the address signal to the dynamic random access memory. A second integrated circuit includes a read/write circuit for reading data from the dynamic random access memory and for writing data in the dynamic random access memory.
申请公布号 US5321666(A) 申请公布日期 1994.06.14
申请号 US19910716821 申请日期 1991.06.17
申请人 HITACHI, LTD. 发明人 FUKUNAKA, HIDETADA;ISHIYAMA, AKIRA
分类号 G11C11/409;G11C7/10;G11C7/22;G11C8/18;(IPC1-7):G11C7/00 主分类号 G11C11/409
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