发明名称 |
Control circuit of dynamic random access memory |
摘要 |
A control circuit of a memory system including a dynamic random access memory may include a first integrated circuit formed on a common substrate. The first integrated circuit may include a circuit responsive to an external memory access request signal for generating a control signal for controlling an operation timing of the dynamic random access memory to supply the control signal to the dynamic random access memory and a circuit for generating an address signal for specifying an address of the dynamic random access memory to be accessed to supply the address signal to the dynamic random access memory. A second integrated circuit includes a read/write circuit for reading data from the dynamic random access memory and for writing data in the dynamic random access memory.
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申请公布号 |
US5321666(A) |
申请公布日期 |
1994.06.14 |
申请号 |
US19910716821 |
申请日期 |
1991.06.17 |
申请人 |
HITACHI, LTD. |
发明人 |
FUKUNAKA, HIDETADA;ISHIYAMA, AKIRA |
分类号 |
G11C11/409;G11C7/10;G11C7/22;G11C8/18;(IPC1-7):G11C7/00 |
主分类号 |
G11C11/409 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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