| 摘要 |
An imaging device comprising a vacuum vessel, an electron source arranged in the vessel and a solid-state image sensor arranged to receive signal electrons emitted from the electron source. The solid-state image sensor comprises a charge transferring device, picture element electrodes, an electron multiplier layer, and a surface electrode layer. The picture element electrodes are connected to the charge transferring device and cover the major part of this device. The surface electrode layer and the electron multiplier layer are stacked on the picture element electrodes. The surface electrode layer formed on the electron multiplier layer transmits the incident signal electrons to the electron multiplier layer.
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