| 发明名称 |
Method to electrochemically deposit compound semiconductors |
| 摘要 |
A method to electrochemically deposit semiconductors and for the electrochemical formation of epitaxial thin-film, single-crystalline compound semiconductors comprising alternating electrodeposition of atomic layers of selected pairs of elements using underpotential deposition.
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| 申请公布号 |
US5320736(A) |
申请公布日期 |
1994.06.14 |
| 申请号 |
US19910695969 |
申请日期 |
1991.05.06 |
| 申请人 |
UNIVERSITY OF GEORGIA RESEARCH FOUNDATION |
发明人 |
STICKNEY, JOHN L.;GREGORY, BRIAN W.;VILLEGAS, IGNACIO |
| 分类号 |
C25D5/10;C25D7/12;C30B7/12;C30B19/00;H01L21/208;H01L21/36;H01L21/368;(IPC1-7):C25D5/10 |
主分类号 |
C25D5/10 |
| 代理机构 |
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代理人 |
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| 地址 |
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