发明名称 Method of manufacturing a surface acoustic wave device
摘要 A method of manufacturing a surface acoustic wave device which has a smaller insertion loss and which operates at higher frequency than a conventional surface acoustic wave device is provided. The surface acoustic wave device includes a substrate, a diamond layer formed on the substrate, a piezoelectric layer formed on the diamond layer, and electrodes formed on any of the substrate, the diamond layer and the piezoelectric layer. The piezoelectric layer is formed by the laser ablation method. The insertion loss of this acoustic wave device is small even in a high frequency range of several hundreds MHz to GHz. Therefore, the device can be used as a frequency filter, a resonator, a delay line, a convolver, a correlator and the like.
申请公布号 US5320865(A) 申请公布日期 1994.06.14
申请号 US19920947283 申请日期 1992.09.16
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 NAKAHATA, HIDEAKI;SHIKATA, SHINICHI;HACHIGO, AKIHIRO;FUJIMORI, NAOJI
分类号 H03H3/08;H03H9/02;H03H9/145;(IPC1-7):H01L41/22 主分类号 H03H3/08
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