发明名称 |
High frequency FET structure |
摘要 |
A GaAs field effect transistor with a source contact including both an ohmic contact and a Schottky barrier, the Schottky barrier between the ohmic contact and the gate, is disclosed. The Schottky barrier provides a high frequency source contact close to the active channel and thereby reduces the parasitic source resistance at microwave and higher frequencies.
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申请公布号 |
US5321284(A) |
申请公布日期 |
1994.06.14 |
申请号 |
US19890453244 |
申请日期 |
1989.12.18 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
SCOTT, BENTLEY N.;ZIMMERMAN, DALE E. |
分类号 |
H01L21/338;H01L29/78;H01L29/80;H01L29/812;(IPC1-7):H01L29/80 |
主分类号 |
H01L21/338 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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