| 摘要 |
<p>PURPOSE:To reduce the step of the intersection of a gate bus line and a drain bus line and to prevent insulation breakdown of a gate insulation film. CONSTITUTION:In this thin-film transistor matrix with gate electrodes 5a and 6a, a gate insulation film, an operation semiconductor film 8, source/drain electrodes 11 and 11b which are laminated in sequence on a transparent insulation substrate 1, the gate bus lines 5a and 6b connecting between the gate electrodes 5a and 6, and a drain bus line 13 for connecting the drain electrodes 11b, the transparent insulation substrate 1 has a recessed part corresponding to the gate electrodes 5a and 6a and the gate bus lines 5b and 6b an the gate electrodes 5a and 6a and the gate bus lines 5b and 6b are formed at the recessed part. Also, the gate electrodes 5a and 6a and the gate bus lines 5b and 6b consist of the first conductor layers 5a and 5b and the second conductor layers 6a and 6b which are laminated in sequence, the first conductor layers 5a and 5b are aluminum, the second conductor layers 6a and 6b are high melt-point metals, and then the first conductor layers 5a and 5b are not in contact with a gate insulation film 7.</p> |
