| 摘要 |
PURPOSE:To obtain a semiconductor device which can pinch a leakage current with a depletion layer from a p-n junction even in its peripheral section and can be increased in breakdown strength by forming a guard ring area in a protruding state at the part opposed to a p-n junction diode area. CONSTITUTION:The outer and inner peripheries of a p-type guard ring area 4 are not parallel with each other and a protruding section 41 is formed on the inner periphery side in a state where the section 41 is opposed to a p<+>-area 3 on the inner periphery. The protruding section 41 of the p<+>-guard ring area 4 has a clearance equal to the clearance L at the central part against the opposed p<+>-are 3 and, at the same time, the same clearance L against its adjacent protruding section 41. As a result, a Schottky barrier diode section is connected to a depletion layer as at the central part of a substrate the breakdown strength of this semiconductor device is increased when a reverse voltage is applied. In addition, the decrease of the area of an SBD area is minimized and the current capacity of the device hardly drops. |
