| 摘要 |
<p>PURPOSE:To increase the number of elements produced from the same wafer and to get sufficient photocurrent by deciding the length of photodiode. CONSTITUTION:A laser section 3 with an active area 1 including stripes 2 and a monitor photodiode section 4 are formed on one semiconductor base 5. The laser section 3 and the photodiode section 4 are electrically separated by a separation groove 6, which has one wall 7 on the laser side and the other wall 8 on the photodiode side. The photodiode length LPD is within a range of 100mum to 200mum, and the wall 8 at the photodiode side is formed diagonally against the stripe-shaped active area 1 and perpendicular to the surface of the semiconductor base 5. Thus, the length of the monitor photodiode becomes long enough to increase the number of elements produced from the same wafer and get the sufficient photocurrent.</p> |
