POLARIZED ELECTRON BEAM GENERATOR ELEMENT

摘要

PURPOSE:To improve derivation efficiency of a polarized electron beam although a difference between band gaps is not greater in a polarizxed electron beam generator device for generating a polarized electron beam where the direction of a spin is polarized from the surface of a semiconductor photoelectric layer by providing a semiconductor barrier layer of a multiple quantum well structure to reflect the polarized electron beam on the back side of the semiconductor photoelectric layer. CONSTITUTION:A polarized electron beam generator device 10 includes a semiconductor barrier layer 14 and a semiconductor photoelectric layer 16 both being grown on a substrate 12 by an MBE process. The semiconductor photoelectric layer 16 is crystal-grown on the semiconductor barrier layer 14 in its state having a lattice distorsion caused on the basis of a difference between the lattice constants. The semiconductor barrier layer 14 has a greater band gap than the semiconductor barrier layer 16 and further has a higher substantial potential barrier height than bulk Al0.4Ga0.6As owing to its multiple quantum well structure. Further, electrons generated at the semiconductor photoelectric layer 16 are satisfactorily prevented from entering the side of the semiconductor barrier layer 14 to ensure a higher derivation efficiency.