| 摘要 |
<p>PURPOSE:To provide a compact semiconductor electron emission element and a manufacturing method for a cold cathode electron emission element using gold crystals by which an element structure and manufacturing processes can be simplified, and high speed element action can be achieved. CONSTITUTION:An element structure is simplified by forming a guard ring, required for protecton of a periphery of a depletion layer 111 formed by Schottky partition wall junction or PN junction, of a high density N-type semiconductor to be low density P-type semiconductor zones 102, 104 or oxidized film formed by LOCOS or half-insulation. By forming a resistance value of a third zone 103 as desired, current-voltage characteristics of an element can be set, and by setting the third zone of a low resistance, high speed element action can be achieved. The element structure and manufacturing processes can thus be simplified, and high speed element action can be provided. Dispersion of thermoelectrons passing through an Au film can be reduced, and the irregularity or unstableness of electron emission caused by irregularities in the surface can be prevented.</p> |
