发明名称 SHORTCIRCUIT DETECTION AND DRIVE METHOD FOR FIELD EMISSION ELEMENT AND FIELD EMISSION ELEMENT
摘要 <p>PURPOSE:To provide a detection method for ensuring the easy determination of a field emission element shortcircuited between an emitter and a gate, and a field emission element drive method for ensuring the easy design and manufacture of a fuse connected for separating a shortcircuited element, and the proper blowing of a fuse connected to a shortcircuited element, regarding a field emission element. CONSTITUTION:This is a method for detecting a shortcircuit in an field emission element having an emitter 2 and a gate 3 around the emitter 2 for externally introducing an electron beam on field emission from the emitter 2 via the application of forward bias. Also, constitution is so made that inverse bias is applied whenever necessary between the emitter 2 and the gate 3, and current at the time of inverse bias application is measured.</p>
申请公布号 JPH06162951(A) 申请公布日期 1994.06.10
申请号 JP19920316971 申请日期 1992.11.26
申请人 FUJITSU LTD 发明人 ISHII TOMOYUKI;KONDO NOBUYOSHI;BETSUI KEIICHI
分类号 H01J29/46;H01J1/304;H01J29/04;H01J31/12;(IPC1-7):H01J29/46 主分类号 H01J29/46
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