MANUFACTURE OF THIN-FILM TRANSISTOR

摘要

PURPOSE: To obtain a thin film transistor in which an oxide is formed between a gate structure and a silicon by depositing amorphous silicon and then heat treating it. CONSTITUTION: A silicon region 3 is formed by depositing silicon at a temperature lower than recrystallization point of about 575 deg.C. Silicon is deposited as amorphous silicon where a larger grain than polysilicon is formed after recrystallization annealing which can be performed immediately, i.e., after deposition. A gate structure having a conductive region 13 of polysilicon isolated from the silicon 3 by an oxide 11 can be formed easily using a conventional technology similarly to a source/drain region 5. The oxide 11 has a composite multilayer structure having regions 111, 113 and 115 and comprises a thin growth layer 113 and an arbitrary deposition layer 115 compressed by high pressure oxidation.