| 摘要 |
<p>PURPOSE:To reduce the power consumption in the output floating mode at the time of read. CONSTITUTION:In the case of read operation, a control signal CN goes to a high level, and an inverted output enable signal OEN goes to a low level, and the output of a control circuit 50 is in a high level, and a sense amplifier 30 is made to be in the selecting state. If a word line WL is in the high level and a column line CL is in the high level and a memory cell 10 is selected, stored data of this memory cell 10 is amplified in the sense amplifier 30 through a pair of bit lines BLa and BLb and the pair of data lines Da and Db. In the floating mode where the signal OEN is in the high level, the output of the control circuit 50 is in the low level, and the sense amplifier 30 is made to be in the non-selected state, and simultaneously, the output of the sense amplifier 30 is latched by an output latch circuit 60.</p> |
