FORMATION METHOD OF CAPACITOR ON SAME SUBSTRATE AS MOS TRANSISTOR, CAPACITOR FORMED BY IT AND FORMATION METHOD OF ELECTRIC STRUCTURE,申请号JP19910265335-传众专利搜索

发明名称	FORMATION METHOD OF CAPACITOR ON SAME SUBSTRATE AS MOS TRANSISTOR, CAPACITOR FORMED BY IT AND FORMATION METHOD OF ELECTRIC STRUCTURE
摘要
申请公布号	JPH06163818(A)	申请公布日期	1994.06.10
申请号	JP19910265335	申请日期	1991.09.17
申请人	MAIKURERU SEMICONDUCTOR	发明人	MAATEIN JIEI ORUTAA
分类号	H01L27/04;H01L21/822;H01L21/8234;H01L27/06;H01L27/08;H01L29/94;(IPC1-7):H01L27/04	主分类号	H01L27/04
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