发明名称 REDUCTION OF 1/F NOISE OF HETEROJUNCTION BIPOLAR TRANSISTOR
摘要 PURPOSE: To reduce low frequency noise in base-emitter junction space charge region by a structure wherein an emitter region has a mesa part and a shelf part thinner than the mesa part with the mesa part being spread over a part of a base region on the outside of the mesa part. CONSTITUTION: A collector area 3 is formed epitaxially on a subcollector 1. Similarly, a base layer 5 is formed on the collector layer 3 followed by formation of an emitter layer 7 and an N type layer 8. Subsequently, an emitter metal 9 is deposited partially on the surface of the N type layer 8 and used as a mask for forming a shelf part 11 and a mesa part 13. Finally, a resist layer 15 on the shelf part 11 is removed by etching while leaving a part thereof until the base layer 5 is reached. Consequently, the shelf part 11 of emitter is spread on the surface of the base and noise characteristics can be improved for both low frequency and high frequency.
申请公布号 JPH06163566(A) 申请公布日期 1994.06.10
申请号 JP19930171400 申请日期 1993.07.12
申请人 TEXAS INSTR INC <TI> 发明人 UIRIAMU UEI CHIYUNGU RIU;SHIYOU KONGU FUAN
分类号 H01L29/73;H01L21/331;H01L29/08;H01L29/737;(IPC1-7):H01L21/331 主分类号 H01L29/73
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