| 摘要 |
<p>PURPOSE:To make it possible to finish grooving work only at a single process by cutting a narrower groove from the position of a groove on the other side of a semiconductor substrate simultaneously when cutting a groove whose depth exceeds a PN junction formed in parallel from one side of the substrate to the side in a cutting area where the substrate is divided into element pieces. CONSTITUTION:A silicon substrate 1 forms a PN junction 2 by impurity diffusion from one side of an n type silicon wafer. A resist pattern is formed on both sides of the substrate with a double face aligner. There are formed a groove 3 whose depth exceeds a PN junction 2 from one side and a groove 4 which is opposed to the groove 3 from the other side and whose depth is equivalent to 1/3 the groove 3 by wet etching. This construction makes it possible to form both the grooves 3 and 4 at a single etching process simultaneously by setting the width of a checkered window of the resist pattern to 200mum and over and 100mum and below.</p> |
