| 摘要 |
PURPOSE:To obtain a photovoltaic element which can be manufactured by a simple process using semiconductor particles without precisely controlling the shape and the size of the semiconductor particles to be used. CONSTITUTION:Silicon particles 3 are fixed to a metal film 2 being a first electrode layer. The peripheral parts of the silicon particles 3 are covered with light transmitting SiO2 layers 4. A semiconductor layer 3a of conductivity type opposite to that inside of the silicon particle is formed on the surface of the upper part of the silicon particle 3. A transparent conducting film 5 being a second electrode layer is formed on the particles. Thereby the light reflected from the surface of the metal film 2 being the first electrode layer can be absorbed from the side surfaces of the silicon particles 3, so that the photoelectric conversion efficiency can be improved. |
