| 摘要 |
PURPOSE:To provide a device isolation groove formation method which makes it possible to fill up an insulation film with ease, and what is more, to process a gate electrode with ease. CONSTITUTION:Al the whole areas where an isolation groove of a polysilicon film 104 is formed is removed by etching, thereby forming a polysilicon film 104a whose sides may be inversely tapered. A side wall oxide film 106 is formed on the side of the polysilicon film 104a where an element isolation groove 108 is formed. After the formation of a tungsten silicide film 110 on the whole surface, a gate electrode wiring pattern is etched, thereby forming a gate electrode under polycide structure which contains a polysilicon film 104b.
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