| 摘要 |
PURPOSE:To form a tantalum oxide thin film by vapor phase epitaxial growth using a Ta-based material gas and a mixture gas of oxygen and ozone in which dielectric properties are improved, e.g. high withstand voltage, low leak current, and the like, by performing heat treatment in oxidizing atmosphere after formation of film. CONSTITUTION:A Ta-based material gas, e.g. Ta(OC2H5)5 is introduced, while being bubbled by an inert gas such as He subjected to flow control, into a vacuum tank 1 where a substrate 3 of Si, for example, is placed while heated at 400 deg.C so that decomposition takes place in vapor phase. Reaction with oxygen and ozone then takes place to form a thin film which is heat treated at relatively low temperature of 45 to 600 deg.C in oxidizing atmosphere of oxygen, for example, thus forming a tantalum oxide thin film excellent in dielectric properties. |
