| 摘要 |
PURPOSE:To provide the structure and manufacturing method of a semiconductor device in high integrated density. CONSTITUTION:The bonding pad of a semiconductor element is connected to a wiring pattern formed on a substrate while a semiconductor device is either integrally molded of a transfer mold resin or covered with a potting mold resin. At this time, the projecting part of the wire bonding region of a semiconductor element 2 on the first surface of the substrate is not to be overlapped with the projecting parts of the wire bonding regions of the other semiconductor elements 10, 8. Furthermore, a tape carrier package and plastic package are individually or laminatedly overlapped with one another on the substrate or the semiconductor elements to be structured. Through these procedures, after finishing the wire-bonding step of the semiconductor element on the surface, the rear surface of the substrate in the wire-bonding region of the semiconductor element on the other surface can be depressed by a jig without fail thereby enabling the wire bonding step to be stabilized. |
